Description

General Description
Using NCE’s proprietary high density trench gate design and advanced FS (Field
Stop) Gen.7 technology, the 1200V Trench Field Stop Gen.7 IGBT offers superior
conduction and switching performances, and easy parallel operation;
Features
 Trench Field Stop Gen.7 Technology Offering
 Low saturation voltage: VCEsat = 1.6V(Typ.) @ IC = 100 A
 High speed switching, Low switching losses
 Maximum junction temperature Tvjmax = 175°C
 Tighten parameter distribution
 High ruggedness, temperature stable behavior
 Pb-free lead plating; RoHS compliant
 AEC-Q101 qualified

download：NCEA100ED120BTP